发明名称 HEAT TREATMENT EQUIPMENT AND METHOD FOR MANUFACTURING SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide heat treatment equipment capable of performing heat treatment at a high temperature of 1,400°C or above by manufacturing a reaction tube in which problems of a prior art, i.e. a shape, machining accuracy, strength, and the like, are solved. SOLUTION: In the heat treatment equipment comprising a reaction tube 36 for treating a substrate, and a heater 42 for heating the substrate in the reaction tube 36, a flange 36b of the reaction tube 36 is composed of porous silicon carbide impregnated with silicon, a body 36a of the reaction tube 36 is composed of porous silicon carbide, and a CVD film of silicon carbide is formed at least on the inner surface of the body 36a and/or the flange 36b of the reaction tube 36. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004281672(A) 申请公布日期 2004.10.07
申请号 JP20030070325 申请日期 2003.03.14
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 ISHIGURO KENICHI
分类号 H01L21/22;H01L21/31;H01L21/324;(IPC1-7):H01L21/31 主分类号 H01L21/22
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