| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an electron beam exposure system in which a variation in pattern line width due to the flexure of a mask can be corrected when exposure is performed using an electron beam which cannot be made parallel completely. <P>SOLUTION: The electron beam proximity exposure system 1 comprises a means 71 for correcting the exposure amount of an electron beam projected to a mask depending on the distance between the mask and a sample varying depending on the flexure of the mask at each position. The exposure amount correcting means 71 comprises a section 73 for storing a correction factor of an exposure amount for each flexure, and a section 75 for controlling the exposure amount based on the correction factor. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
