发明名称 Photoresist compositions
摘要 The present invention relates to a composition and a process for preparing a composition that comprises: 1) a film-forming novolak resin wherein the hydrogen atom of a hydroxyl group in the novolak resin is substituted with a naphthoquinonediazidosulfonyl (DNQ) group in a proportion of less than 3.0 mol % per hydrogen atom to form a partially esterified novolak resin; 2) at least one photosensitive component present in an amount sufficient to photosensitize the photoresist composition; and 3) at least one solvent.
申请公布号 US2004197696(A1) 申请公布日期 2004.10.07
申请号 US20030404722 申请日期 2003.04.01
申请人 EILBECK J. NEVILLE 发明人 EILBECK J. NEVILLE
分类号 G03F7/00;G03F7/022;G03F7/023;G03F7/30;(IPC1-7):G03F7/023 主分类号 G03F7/00
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