| 发明名称 |
Gate edge diode leakage reduction |
| 摘要 |
An embodiment of the invention is an integrated circuit 2 having halo atoms 12 concentrated at a gate side of a channel region and impurity atoms 14 within the channel region. Another embodiment of the invention is a method of manufacturing an integrated circuit that includes the implantation of impurity atoms 14 into a semiconductor substrate 11.
|
| 申请公布号 |
US2004195633(A1) |
申请公布日期 |
2004.10.07 |
| 申请号 |
US20030407128 |
申请日期 |
2003.04.03 |
| 申请人 |
CHAKRAVARTHI SRINIVASAN;POTLA SURESH;POLLACK GORDON P.;JAIN AMITABH |
发明人 |
CHAKRAVARTHI SRINIVASAN;POTLA SURESH;POLLACK GORDON P.;JAIN AMITABH |
| 分类号 |
H01L21/265;H01L21/336;H01L29/10;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/265 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
