METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE TO WIDEN WIDTH OF GATE ELECTRODE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to minimize the resistance of a word line and the overlap between a gate electrode and a source/drain by widening the width of the gate electrode. CONSTITUTION: A floating gate electrode(114) is formed on a semiconductor substrate(110). A dielectric film(116), the first conductive layer(118), the second conductive layer(120) and a hard mask layer are sequentially formed on the floating gate electrode. A hard mask pattern(122) is formed by patterning the hard mask layer. A spacer(130) is formed to widen the effective channel length at both sidewalls of the hard mask pattern. A stacked gate electrode is then formed by etching the second and first conductive layer, the dielectric film and the floating gate electrode using the hard mask pattern with the spacer as a mask.