METHOD FOR FORMING POLYCRYSTALLINE SILICON LAYER USING NICKEL ALLOY LAYER AND TFT FABRICATION METHOD USING THE SAME TO SHORTEN CRYSTALLIZATION PERIOD

摘要

PURPOSE: A method for forming a polycrystalline silicon layer using a nickel alloy layer and a TFT fabrication method using the same are provided to shorten a crystallization period by using Ni alloy including Pd or Co as a metal layer. CONSTITUTION: An amorphous silicon layer(2) is formed on an insulating substrate(1). A channel region and the first and the second regions are formed by patterning the amorphous silicon layer. A gate insulating layer and a gate electrode are formed on the channel region. A metal layer(6) as an Ni alloy layer including Pd or Co is formed on the entire surface of the substrate. An ion implantation process is performed on the substrate. A thermal process is performed under the low temperature. The first and the second regions are crystallized by a MIC method. The channel region is crystallized by a MILC method.