LOW-DIELECTRIC POLYSILSESQUIOXANE COPOLYMER, INSULATION FILM, HAVING LOW-DIELECTRIC NANOPORES AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: Provided is a low-dielectric polysilsesquioxane copolymer, which has more reduced dielectric constant compared to conventional polysilsesquioxane while maintaining advantages thereof, and is produced by a simple process excluding a physical mixing step with a porogen. CONSTITUTION: The low-dielectric polysilsesquioxane copolymer is prepared by the copolymerization of a cyclic compound-based silane derivative represented by the formula of CC-£-Link-Si(OR3)|x with a silsesquioxane precursor. In the formula, R is methyl or ethyl; "CC" is a cyclic compound including at least one selected from the group consisting of adamantane, biadamantane, triadamantane, diamantane, norbornene, and norbornane of bicycloalkane series or cyclohexane of cycloalkane series that have a molecular structure similar to the structures of the aforementioned cyclic compounds; "Link" is a functional group for linking the Si atom with the cyclic compound, and is selected from the group consisting of the following formulae G to J, wherein x is an integer of 1 or more.