METHOD FOR FORMING FINE CONTACT OF SEMICONDUCTOR DEVICE TO HAVE CONTACT AREA WITHOUT DAMAGE OF CONDUCTIVE LINE

摘要

PURPOSE: A method for forming a fine contact of a semiconductor device is provided to be capable of achieving contact area without damage of a conductive line. CONSTITUTION: Conductive lines(33) are formed on a semiconductor substrate(31). The first nitride layer(37) as a spacer and an interlayer dielectric(39) are sequentially formed on the resultant structure. A silicon layer(41) as a hard mask or an etch stop layer is formed on the interlayer dielectric. The silicon layer and the interlayer dielectric between the conductive lines are removed by dry etching using a contact mask. The second nitride layer(45) as a spacer is formed on the resultant structure. By wet etching of the second nitride layer, contact holes(47) are formed to expose the substrate.