METHOD AND APPARATUS FOR MANUFACTURING POLYCRYSTALLINE SILICON THIN FILM TO IMPROVE ELECTRICAL PROPERTIES

摘要

PURPOSE: A method and apparatus for manufacturing a polycrystalline silicon thin film is provided to improve electrical properties and to shorten manufacturing time by annealing the polycrystalline silicon using ELA(Excimer Laser Annealing). CONSTITUTION: A semiconductor substrate is prepared(S10). The first polycrystalline silicon thin film is formed by depositing the first polycrystalline silicon particle with the first size of 100-500Å on the substrate(S20). The first polycrystalline silicon thin film is changed to the second polycrystalline silicon thin film by growing and activating the first polycrystalline silicon particle to the second polycrystalline silicon particle with the second size using excimer laser annealing, wherein the second size is larger than the first size(S30). The second size is about 1000-4000Å.