发明名称 Method of manufacturing a monocrystalline semiconductor wafer with mirror-finished surface including a gas phase etching and a heating step, and wafers manufactured by said method
摘要
申请公布号 EP0798766(B1) 申请公布日期 2004.10.06
申请号 EP19970302061 申请日期 1997.03.26
申请人 SHIN-ETSU HANDOTAI COMPANY LIMITED 发明人 OISHI, HIROSHI
分类号 H01L21/302;C30B33/00;H01L21/304;H01L21/3065;(IPC1-7):H01L21/304 主分类号 H01L21/302
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