| 摘要 |
The object of the present invention is directed to shorten a manufacturing TAT when changing a stored data of a mask ROM incorporated into a semiconductor integrated circuit device with multi-layered structure, and to improve a manufacturing yield. For example, when the semiconductor integrated circuit device comprising an interconnection layer with five layers are manufactured, when fabricating samples or prototypes where data to be written to the mask ROM is frequently changed, the manufacturing TAT is shortened by means of configuring a bit line as a fifth layer of metal interconnection layer of an uppermost layer, and an interlayer dielectric (ILD) layer just below it as a forming layer of a via hole for use in data writing. During the manufacture of mass-produced products after determining the ROM data, it is possible to decrease the number of layers for configuring the memory cell by means of forming the bit line by the first metal interconnection layer of a lowermost layer, and configuring the ILD layer just below it as a forming layer of the via hole for use in data writing, to improve the manufacturing yield by reducing manufacturing process steps of the memory cell.
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