发明名称 |
INTERLAYER DIELECTRIC OF SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF TO STABLY USE HTO LAYER AND BPSG LAYER WITHOUT PREVENTING SILICIDE LAYER FROM BEING INFLUENCED BY HEAT |
摘要 |
PURPOSE: An interlayer dielectric of a semiconductor device is provided to stably use an HTO(high temperature oxide) layer and a BPSG(boron phosphorous silicate glass) layer without preventing a silicide layer from being influenced by heat by interposing a low temperature oxide layer between the silicide layer and the HTO layer. CONSTITUTION: An electrode structure of a semiconductor device includes a silicide layer(33). A low temperature oxide layer(35) is formed on the silicide layer at a predetermined temperature. A high temperature oxide layer(36) formed at a higher temperature than that of the low temperature oxide layer and a BPSG layer(37) are sequentially stacked. The thickness of the low temperature oxide layer is 300-500 angstroms, and the predetermined temperature is 350 deg.C.
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申请公布号 |
KR100452311(B1) |
申请公布日期 |
2004.10.01 |
申请号 |
KR19970013353 |
申请日期 |
1997.04.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, BEOM SEOK |
分类号 |
H01L21/31;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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