| 摘要 |
PROBLEM TO BE SOLVED: To prevent the diameter of a contact hole from being enlarged when the contact hole is cleaned. SOLUTION: After a first interlayer insulating film 107 made of a BPSG film is formed so as to cover a gate electrode 102, a spacer 103, and a sidewall 104 on a silicon substrate 100; a second interlayer insulating film 108 made of a high density plasma oxide film is formed on the first interlayer insulating film 107 by a high density plasma density CVD method in the state that the temperature of the silicon substrate 100 is set to 600°C. After the second interlayer insulating film 108 and the first interlayer insulating film 107 are dry etched with a resist pattern 109 as a mask to form a contact hole 110, the resist pattern 109 is removed, and thereafter the contact hole 110 is cleaned by using a cleaning liquid containing a hydrofluoric acid. COPYRIGHT: (C)2004,JPO&NCIPI
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