| 摘要 |
PURPOSE: A defect relieving method of a semiconductor memory device and the semiconductor memory device are provided to partially use the semiconductor memory device instead of completely removing the device when existing a plurality of defects at a memory cell block at a post-package step. CONSTITUTION: A semiconductor memory device is provided with a plurality of programmable fuse parts(50,60) for supplying a bit signal of a logic '0' or a logic '1' programmed from the outside, an output selecting part(80) for supplying one selected from a group consisting of an address bit, high level voltage, or low level voltage, and an address bit programming part having a coding part(70) for supplying a plurality of control signals in order to control the output selecting part.
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