| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist underlayer film material which is a resist underlayer film material for a multilayered resist process for, for example, a resist upperlayer film containing silicon, and more particularly for a two-layer resist process, functions as an excellent antireflection film to exposure of a short wavelength in particular, i.e., has the transparency higher than that of polyhydroxy strene, cresol novolak, naphthol novolak, etc., has an optimum (n) value (refractive index), and (k) value (extinction coefficient) and has excellent etching resistance in substrate working, and a method for forming the pattern to a substrate by lithography using the same. <P>SOLUTION: The resist underlayer film material for the multilayered resist films used for lithography contains at least the polymer expressed by general formula (1). <P>COPYRIGHT: (C)2004,JPO&NCIPI |
