发明名称 METHOD AND APPARATUS FOR PRODUCING SINGLE CRYSTAL AND LANGASITE SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a method which produces a single crystal while suppressing the formation of a different crystal phase or cracks at a part where single crystal growth ends in growing the single crystal through the vertical Bridgeman method, an apparatus used in the method, and a langasite single crystal produced using the method and apparatus. SOLUTION: The lower end 24 of a suction pipe 25 made of a platinum alloy containing 40% rhodium is inserted into a melt 15 from the top of a crucible 12. The suction pipe 25 is installed to send the melt 15 outside of the crucible 12, and the lower end 24 is positioned 20 mm above a langasite seed crystal 13. Then, the crucible 12 is lowered at a speed of 0.5-3 mm/h to grow the langasite single crystal 17 from the lower side of the crucible 12 toward the top. As soon as the melt 15 reaches a prescribed solidification ratio, a residual-liquid removal step is initiated to suck and remove the residual liquid from the crucible 12. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004269307(A) 申请公布日期 2004.09.30
申请号 JP20030061434 申请日期 2003.03.07
申请人 MITSUBISHI MATERIALS CORP 发明人 INABA HITOSHI
分类号 C30B11/00;C30B29/34;(IPC1-7):C30B11/00 主分类号 C30B11/00
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