| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for more decreasing a resistivity of a tungsten spattered thin film. SOLUTION: In the method for spattering a tungsten or a tungsten-containing thin film on semiconducting wafer from a tungsten target, this method is constituted so as to use krypton or xenon as the spatter gas. Further, in the method for forming the deposited material of the tungsten/tungsten nitride on the wafer, on the wafer, the thin film of the tungsten nitride is spattered and on the thin film of the tungsten nitride, the thin film of the tungsten is spattered. In this way, these two kinds of spattering processes are constituted so as to use the single target and perform in the single chamber. COPYRIGHT: (C)2004,JPO&NCIPI
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