Microelectronic structure comprising a hydrogen barrier layer

摘要

The invention relates to a microelectronic structure which provides improved protection of a hydrogen-sensitive dielectric against hydrogen contamination. According to the invention, the hydrogen sensitive dielectric (14) is covered at lest by an intermediate oxide (18), where material thickness is at lest five times the thickness of the hydrogen-sensitive dielectric. The intermediate oxide (18) simultaneously acts as an internal dielectric and is metabolized on its surface for this purpose. The intermediate oxide (18), which has a sufficient thickness absorbers the hydrogen that may be released during the deposition of a hydrogen barrier layer (22, 26), thus protecting the hydrogen-sensitive dielectric (14).