LDMOS high frequency transistor, has channel and resurf zone arranged in well under gate electrode, between source zone and drain zone

摘要

The transistor has a semiconductor material (11) of a first conductivity type on a substrate (10). A gate electrode (12) is arranged over the semiconductor material. A well (15) of a second conductivity type. A source zone (16) of a first conductivity type is arranged in the well on one side of the gate electrode. A drain zone (17) of a first conductivity type is arranged in the semiconductor material outside the well on the other side of the gate electrode. A channel (18) is arranged in the well under the gate electrode, between the source zone and the drain zone. A resurf zone (19) of a first conductivity type is arranged in the well between the source zone and the drain zone. An independent claim is included for a method of manufacturing an LDMOS high frequency transistor.