Sidewall spacer structure for self-aligned contact and method for forming the same

摘要

In one embodiment, adjacent conductive patterns are formed overlying a semiconductor substrate. The conductive patterns each have a conductive line and a capping layer. A first spacer formation layer is formed between the adjacent conductive patterns. The first spacer formation layer is formed between the top surface of the capping layer and the bottom surface of the conductive line. A conformal second spacer formation layer is formed on the conductive patterns. A first interlayer insulating layer is formed on the conformal second spacer formation layer. Next, an opening is formed to extend to a portion of the first spacer formation layer, in the first interlayer insulating layer. The portion of the first spacer formation layer is etched, using the second spacer formation layer as an etch mask, to form a single-layer spacer on sidewalls of the conductive patterns, concurrently with a contact hole.