发明名称 Semiconductor device having a guard ring
摘要 A multilayer interconnection structure of a semiconductor device includes a first guard ring extending continuously along a periphery of a substrate and a second guard ring extending continuously in the multilayer interconnection structure along the periphery so as to be encircled by the first guard ring and so as to encircle an interconnection pattern inside the multilayer interconnection structure, wherein the first and second guard rings are connected with each other mechanically and continuously by a bridging conductor pattern extending continuously in a band form along a region including the first and second guard rings when viewed in the direction perpendicular to the substrate.
申请公布号 US2004188843(A1) 申请公布日期 2004.09.30
申请号 US20040777189 申请日期 2004.02.13
申请人 FUJITSU LIMITED 发明人 WAKAYAMA SHIGETOSHI;KAI MUTSUAKI;KATO HIROYUKI;SUGA MASATO
分类号 H01L23/52;H01L21/3205;H01L23/00;H01L23/58;(IPC1-7):H01L23/48 主分类号 H01L23/52
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