| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for easily adjusting a threshold voltage of a thin film transistor by plasma without performing an ion implantation process. SOLUTION: The method comprises providing a substrate 100, depositing an amorphous silicon layer 114 on the substrate 100, adjusting the threshold voltage of the thin film transistor 101 by bringing the plasma into contact with the amorphous silicon layer 114, and performing a crystallization process to convert the amorphous silicon layer 114 into a polycrystalline silicon layer 114'. COPYRIGHT: (C)2004,JPO&NCIPI
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