| 摘要 |
PROBLEM TO BE SOLVED: To provide an integrated high-voltage switching circuit used together with an element array. SOLUTION: The switching circuit includes a switch comprising a couple of DMOS transistors (M<SB>D1</SB>, M<SB>D2</SB>) having parasitic gate capacitance combined back to back, and a shared gate terminal. Drains of the DMOS transistors are connected to input and output terminals of the switch. The switching circuit also includes a turn-on circuit (M<SB>4</SB>) including a PMOS transistor whose drain is connected to the shared gate terminal of the switch via a diode (D<SB>1</SB>), whose source is connected to a bias voltage terminal (V<SB>g0</SB>), from which a current is extracted, of a global switch gate, and whose gate is connected to a switch gate control terminal receiving a switch gate control voltage input (V<SB>p</SB>). COPYRIGHT: (C)2004,JPO&NCIPI
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