发明名称 |
Method of depositing aluminium nitride |
摘要 |
A method of depositing crystallographically orientated aluminium nitride. Aluminium nitride is sputter deposited from a target on a workpiece maintained on a biased platen. The sputter gas is or includes krypton or xenon. The bias to the platen is selected to give a substantially flat XRD FWHM profile across the wafer and a stress in the film of less than or equal to ±5E10-8 dynes per cm<2>.
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申请公布号 |
US2004188241(A1) |
申请公布日期 |
2004.09.30 |
申请号 |
US20040482970 |
申请日期 |
2004.01.07 |
申请人 |
RICH PAUL;WIGGINS CLAIRE LOUISE |
发明人 |
RICH PAUL;WIGGINS CLAIRE LOUISE |
分类号 |
C23C14/06;C23C14/34;H01L41/22;H01L41/316;(IPC1-7):C23C14/00;C23C14/32 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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