发明名称 SEMICONDUCTOR LASER DIODE AND SEMICONDUCTOR LASER DIODE ASSEMBLY ADOPTING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor laser diode which can effectively disperse thermal stresses and mechanical stresses applied at the time of performing flip chip bonding and in which uniform optical emission occurs over the whole body of a ridge waveguide, and to provide its assembly. <P>SOLUTION: A semiconductor laser diode 100a containing a first substance layer 120, an active layer 130, and a second substance layer 140 also contains a ridge waveguide 200 which is formed in a ridge-like shape in the upper-layer section of the second substance layer 140 to define a channel in which the uppermost substance layer of the second substance layer 140 is limitedly exposed and contains a second electrode layer which is brought into contact with the uppermost substance layer of the second substance layer 140 through the channel and a first projecting section 210 which is positioned on one side of the ridge waveguide 200 and has a height which is at least equal to that of the ridge waveguide 200. <P>COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004274058(A) 申请公布日期 2004.09.30
申请号 JP20040062196 申请日期 2004.03.05
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KWAK JOON-SEOP;CHAE SU-HEE
分类号 H01S5/022;H01S3/0941;H01S5/00;H01S5/042;H01S5/22;H01S5/323 主分类号 H01S5/022
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