| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a junction method and a device which ensure junction even for a metal, an oxide and a non-metal, for which low-temperature junction are difficult in a conventional method, by forming a practically activated metallic surface with extremely few impurities of the same material in both junction surfaces to be joined when junction objects whose junction surfaces are cleaned by energy wave are joined mutually. <P>SOLUTION: In the junction method, when junction objects at least one of which has a metallic junction part are joined mutually, junction parts of both the junction objects are joined after cleaning of the surface of at least a metallic junction part by energy wave. After cleaning by the energy wave, both the junction objects are held opposite to a pair of plasma electrodes in vacuum atmosphere and the surface of the metallic junction part of one junction object is etched by plasma. Thereby, a metal forming the surface is spattered to a junction part of the other junction object and thereafter both the junction objects are joined mutually. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
