| 摘要 |
A palladium contact (42) and a gasket (62) are formed on a first wafer (32). The gasket (62) and contact (42) are simultaneously engaged with a silicon layer of a second wafer (25). The wafers (25, 32) are then heated to a temperature that both forms a bond between the palladium contact (42) of the first wafer (32) with the silicon layer of the second wafer (25) and that partially melts the gasket (62). Therefore, when the temperature is decreased, the palladium-silicon bond maintains the alignment of the two wafers (25, 32) with respect to one another, and the melted gasket (62) hardens to form seal around a periphery of the two wafers (25, 32). By placing the two wafers (25, 32) in a vacuum environment prior to engaging the two wafers (25, 32), the space encompassed by the gasket (62) and the two wafers (25, 32) forms a sealed vacuum during the heating process. Therefore, the heating process not only forms a palladium-silicon bond between the two wafers (25, 32), but it also forms a vacuum seal around selected components (45) included within either of the two wafers (25, 32). <IMAGE> |
