发明名称 |
Ferroelectric memory devices |
摘要 |
In the present invention, ferroelectric memory devices using a ferroelectric planarization layer and methods of fabricating the same are disclosed. According to the method of the present invention, a conductive layer is formed on an interlayer insulation layer having a contact plug and patterned to form capacitor bottom electrode patterns. A ferroelectric layer for planarization is formed to fill a space between the bottom electrode patterns, and then another ferroelectric layer for a capacitor is formed on the bottom electrode pattern and the ferroelectric layer for planarization.
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申请公布号 |
US6798010(B2) |
申请公布日期 |
2004.09.28 |
申请号 |
US20040758164 |
申请日期 |
2004.01.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE KYU-MANN |
分类号 |
H01L27/105;H01L21/02;H01L21/3105;H01L21/316;H01L21/321;H01L21/8246;H01L27/115;(IPC1-7):H01L21/108 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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