发明名称 Method for making semiconductor device
摘要 According to the method of producing a semiconductor device, the substrate is provided with an opening formed at a substantially central position, interconnections and joining parts. The heat spreading plate has a fixed portion fixed to the substrate, a stage portion caved with respect to the fixed potion and connecting portions connecting the fixed portion and the stage portion. The heat spreading plate is fixed by positioning the stage portion at a position opposing the opening, then the heat spreading plate is welded to the substrate and the semiconductor chip is mounted on the stage portion through the opening. Then the semiconductor chip and interconnections formed on the substrate are electrically connected and sealing resin is formed on both sides of the heat spreading plate such that at least the semiconductor chip is sealed.
申请公布号 US6796024(B2) 申请公布日期 2004.09.28
申请号 US20030392179 申请日期 2003.03.20
申请人 FUJITSU LIMITED 发明人 KATOH YOSHITSUGU;ABE MITSUO;IKEMOTO YOSHIHIKO;HOSOYAMADA SUMIKAZU
分类号 H01L23/12;H01L23/31;H01L23/34;H01L23/433;H01L23/495;(IPC1-7):H05K3/30 主分类号 H01L23/12
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