| 摘要 |
The present invention provides a method of manufacturing a semiconductor device, in which while a conductive layer is formed on an oxide film formed as an insulating layer by using a CVD method, oxygen deficiency of the oxide film can be avoided without any drop in an dielectric breakdown resistance as the insulating layer of the oxide film and without any reduction in a long-term reliability. In this manufacturing method, when the conductive layer as a gate electrode is formed on the oxide film formed as a gate insulating layer, the conductive layer is formed in a non-reducing atmosphere.
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