发明名称 On-chip design-for-testing structure for CMOS APS (active pixel sensor) image sensor
摘要 Apparatus and methods for testing an active pixel sensor ensure that a signal proportional to the quantity of light energy impinging on the active pixel sensor is reliably and accurately captured and made available for further on processing the rest of the APS system circuitry. The apparatus and method determines the capacitance of a photo-conversion device of the active pixel sensor. The apparatus and method determines that an active pixel sensor is functioning correctly. The apparatus and method determines the performance of an active pixel sensor. Where the performance of the active pixel sensor is a measure of linearity of the active pixel sensor and a connected chain of circuitry that process the signal converted by the photo-conversion device of the active pixel sensor.
申请公布号 US6797933(B1) 申请公布日期 2004.09.28
申请号 US20010896486 申请日期 2001.06.29
申请人 VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION 发明人 MENDIS SUNETRA K.;SHU TZI-HSIUNG
分类号 H04N1/00;H04N5/335;H04N5/374;H04N5/378;H04N17/00;(IPC1-7):H01L27/00;H04N3/14 主分类号 H04N1/00
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