| 摘要 |
PROBLEM TO BE SOLVED: To provide an improved magnetic resistance tunnel junction(MTJ) sensor which fixes a magnetizing direction of an antiparallel(AP) pin MTJ sensor, using a high coercive magnetic substance. SOLUTION: The magnetic tunnel junction(MTJ) device can be used as a magnetic field sensor in a magnetic disk drive or as a memory cell in a magnetic random access memory(MRAM) array. The MTJ device includes a ferromagnetic antiparallel(AP) pin layer containing a first ferromagnetic layer, a second ferromagnetic layer, and an antiparalellel conjunction(APC) layer located between the first ferromagnetic layer and the second ferromagnetic layer; a ferromagnetic free layer; and a dielectric tunnel barrier, located between the first ferromagnetic layer and the ferromagnetic free layer. COPYRIGHT: (C)2004,JPO&NCIPI
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