发明名称 |
LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting device having good conductivity and the manufacturing method of the same, in the light emitting device having a structure wherein a light emitting layer unit is bonded to an element substrate through a metal layer. <P>SOLUTION: In the light emitting device 100, the first principal surface of a compound semiconductor layer having a light emitting layer part 24 is utilized as a light take out surface, and the element substrate 7 is connected to the second principal surface side of the compound semiconductor layer through a main metal layer 10 having a reflection surface for reflecting light from the light emitting layer part 24 to the light take out surface side. The element substrate 7 is constituted of an Si substrate having conductivity type of p-type and a contact layer 31 mainly composed of Al is formed immediately above the principal surface of the main metal layer 10 side of the element substrate 7. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
申请公布号 |
JP2004266039(A) |
申请公布日期 |
2004.09.24 |
申请号 |
JP20030053690 |
申请日期 |
2003.02.28 |
申请人 |
SHIN ETSU HANDOTAI CO LTD |
发明人 |
HAGIMOTO KAZUNORI;YAMADA MASAHITO |
分类号 |
H01L33/10;H01L33/30;H01L33/34 |
主分类号 |
H01L33/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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