发明名称 SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE, DEVELOPMENT PROCESSING METHOD AND DEVELOPMENT PROCESSING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing method, a substrate processing device, a development processing method and a development processing device capable of optimizing a substrate conveying speed without causing a rear-end collision accident of a substrate on a conveying path of a flat passing system. SOLUTION: At step 1, a substrate G<SB>i</SB>is temporarily stopped for conveying in at a conveying part. In step 2, the substrate G<SB>i</SB>is passed from the conveying part to a guide part to move to a first developer supply part at a high speed. At step 3, the substrate G<SB>i</SB>is temporarily stopped in a solution filling time in the first developer supply part. In step 4, the substrate G<SB>i</SB>is moved from the first developer supply part to a solution drain-off/rinse part at a middle speed. At step 5, the substrate G<SB>i</SB>is temporarily stopped in a solution drain-off time in the solution drain-off/rinse part. At step 6, the substrate G<SB>i</SB>is moved from the solution drain-off/rinse part to a first rinse part at a middle speed, and when passing through the first rinse part, a moving speed is switched to a low speed. At step 7, the substrate G<SB>i</SB>is moved through a second rinse part and a dry part to a sending part at the low speed. At step 8, the substrate G<SB>i</SB>is moved from the sending part to a convey-out part at the high speed. At step 9, the substrate G<SB>i</SB>is temporarily stopped for conveying out to be conveyed out to the outside. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004266215(A) 申请公布日期 2004.09.24
申请号 JP20030057331 申请日期 2003.03.04
申请人 TOKYO ELECTRON LTD 发明人 SADA TETSUYA
分类号 G02F1/13;B65G49/06;G02F1/1333;G03F7/30;H01L21/027;H01L21/677;H01L21/68;(IPC1-7):H01L21/027;G02F1/133 主分类号 G02F1/13
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