| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon nitride film where WR can be sufficiently reduced, and the sufficient suppression of ion dispersion can be realized and to provide a semiconductor element equipped with it. SOLUTION: This transistor 11 constituting an LDD C-MOS is configured by forming the gate electrode 12 through a gate insulating film 14 on the surface of a silicon wafer W. A side wall 13 constituted of a silicon nitride film is adhered to the side wall of the gate electrode 12, and an extension area 15 doped with B ion is formed through the gate insulating film 14 at the lower part. COPYRIGHT: (C)2004,JPO&NCIPI
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