Process for obtaining synthesis gas by partial catalytic oxidation

摘要

The invention relates to a method for obtaining synthesis gas by partial catalytic oxidation, consisting in bringing a hydrocarbon in a gaseous state into contact with an oxidizing gas, and therefore possibly a small amount of water vapour, in the presence of a catalyst comprising at least one silicon carbide at a temperature of more than 800 DEG C. According to the invention, the silicon carbide has a specific surface which is determined by the BET method and which is less than or equal to 100 m<2>/g, the contact time between the mixture of gaseous hydrocarbon, oxidizing gas and silicon carbide being more than 0.05 seconds and the pressure inside the reactor being greater than atmospheric pressure.