| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit where the malfunction of the circuit due to the drop of power voltage can be prevented, which cannot be dissolved even if power reinforcing measures in an arrangement wiring process is taken in one chip. <P>SOLUTION: The semiconductor integrated circuit comprises (a) a semiconductor chip 1 where wiring for supplying power potential of a high potential-side is formed, (b) a semiconductor chip 2 where wiring for supplying power potential of a low potential-side is formed, and (c) a semiconductor chip 3 including a semiconductor substrate 30, a first group of electrodes 39a which are formed on a first face of the semiconductor substrate and are electrically connected to wiring of the semiconductor chip 1, a second group of electrodes 35b which are formed on a second face of the semiconductor substrate and are electrically connected to wiring of the semiconductor chip 2 and a plurality of circuit elements to which power potential of the high potential-side is supplied from the first group of the electrodes and to which power potential of the low potential-side is supplied from the second group of the electrodes and are operated. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
