| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming wiring by which voids can be suppressed and the wiring can be made hard to break by suppressing a local stress concentration on a wired film. SOLUTION: A wiring groove 2 is formed in an interlayer insulating film 1 on a wafer W, and then a barrier metal film 3, a seed film 4, and a wiring film 5 are formed on the interlayer insulating film 1. After formation of the wiring film 5, a protective film 6 is formed on the wiring film 5, and the film 5 is annealed. Thereafter, the protective film 6 and the wiring film 5 other than its part buried in the wiring groove 2 are removed. COPYRIGHT: (C)2004,JPO&NCIPI
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