SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF TO EMBODY LOW DIELECTRIC CONSTANT AND PREVENT PEELING PROBLEM

摘要

PURPOSE: A semiconductor device is provided to remarkably reduce parasitic capacitance of a semiconductor device and control a signal delay caused by miniaturization by supplying an insulation layer capable of embodying a low dielectric constant. CONSTITUTION: An inorganic layer(302) is formed on a semiconductor base material(301). A silicon containing intermediate layer(303) is formed on the inorganic layer. A fluorine containing organic layer(304) is formed on the silicon containing intermediate layer. The inorganic layer is selected from a group composed of a SiO2 layer, a SiC layer, a SiOC layer, a SiCN layer and a SiON layer.