发明名称 |
Substrate of semiconductor device and fabrication method thereof as well as semiconductor device and fabrication method thereof |
摘要 |
There are provided a substrate of a semiconductor device and a fabrication method thereof which allow to suppress impurity from turning around from a glass or quartz substrate in fabrication steps of a TFT. An insulating film is deposited so as to surround the glass substrate by means of reduced pressure thermal CVD. It allows to suppress the impurity from infiltrating from the glass substrate to an active region of the TFT in the later process.
|
申请公布号 |
US6794681(B2) |
申请公布日期 |
2004.09.21 |
申请号 |
US20010953483 |
申请日期 |
2001.09.14 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
NAKAJIMA SETSUO;YAMAZAKI SHUNPEI;OHTANI HISASHI;TERAMOTO SATOSHI;HAMATANI TOSHIJI |
分类号 |
G02F1/1362;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L29/04;H01L31/036;H01L29/76;H01L31/112;H01L23/158 |
主分类号 |
G02F1/1362 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|