METHOD FOR MANUFACTURING FLASH MEMORY DEVICE TO PREVENT DAMAGE OF SUBSTRATE AND MISALIGNMENT OF DUMMY PATTERN

摘要

PURPOSE: A method for manufacturing a flash memory device is provided to prevent damage of a substrate and misalignment of a dummy pattern by removing outmost dummy pattern of cell patterns. CONSTITUTION: A tunnel oxide layer(112), the first polysilicon layer(114) and a pad nitride layer are sequentially formed on a substrate(110) defined with a cell region(A) and a dummy region(B). A trench isolation layer(118) is formed in the substrate. The pad nitride layer is removed and the second polysilicon layer(120) is formed on the resultant structure. By patterning the second polysilicon layer, a floating gate is formed on the cell region and the second polysilicon layer remains on the dummy region.