发明名称 |
Internal voltage converter scheme for controlling the power-up slope of internal supply voltage |
摘要 |
Ramping voltage circuits are described for augmenting or supplying a higher power-up slope upon initial power-up or a wake-up transition from a period of dormancy to a semiconductor memory device. Such ramping voltage circuits are responsive to a power-up signal, and are capable of increasing by at least two orders of magnitude the power-up slope, thereby enabling far quicker device turn-on. In one embodiment, a level shifter is used to ramp up the power-on voltage. In another embodiment, the internal voltage line is effectively shorted to an external voltage line via a power-up turned-on PMOS or depletion-type NMOS transistor.
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申请公布号 |
US6795366(B2) |
申请公布日期 |
2004.09.21 |
申请号 |
US20020272404 |
申请日期 |
2002.10.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JUNE |
分类号 |
G11C16/06;G05F1/46;G05F1/56;G11C5/14;G11C11/40;G11C11/4074;(IPC1-7):G11C7/00 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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