发明名称 |
Method of calculating the real added defect counts |
摘要 |
The present invention provides a method of producing an added defect count for monitoring the property of chambers or wafers. First, a proper pre-process sensitivity is determined with map to map process by maximizing the summation of a mapping rate and a catching rate. Second, a wafer is scanned with the proper pre-process sensitivity and a pre-process particle number P1 is recorded. Third, a manufacturing step is processed on the wafer. Fourth, the wafer is scanned with the most sensitive scale of the post-process sensitivities and a post-process particle number P2 is recorded. Finally, the post-process particle number P2 is subtracted from the pre-process particle number P1.
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申请公布号 |
US6794203(B2) |
申请公布日期 |
2004.09.21 |
申请号 |
US20020218591 |
申请日期 |
2002.08.15 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHEN WEI-MING;LIU KUN-YU;CHEN CHUN-CHIEH;HO LIEN-CHE |
分类号 |
H01L21/00;H01L21/20;H01L21/31;H01L21/469;H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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