| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to prevent fail and to increase capacitance by preventing collapse of lower electrodes. CONSTITUTION: An interlayer dielectric(160) with a lower electrode contact(180) is formed on a substrate. An insulating layer(200a) and the first upper electrode(220) are sequentially formed on the resultant structure. A hole is formed to expose the lower electrode contact. The first dielectric film(240b) is formed on the exposed lower electrode contact and at both sides of the first upper electrode. The first lower electrode(260) is formed on the resultant structure. By selectively etching the first lower electrode and the first dielectric film, the first upper electrode is exposed. The second lower electrode(280) is formed. Then, the second dielectric film(300) and the second upper electrode(320) are formed on the second lower electrode.
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