METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE TO PREVENT SILICIDE BRIDGE BETWEEN GATE ELECTRODE AND ACTIVE REGION

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent silicide bridge between a gate electrode and an active region by using a hard mask and to reduce particles by using an organic oxide layer. CONSTITUTION: A gate electrode(20) is formed on a semiconductor substrate(10) having a selective salicide region(A) and a complete salicide region(B) by using a hard mask(90). A spacer(30) is formed at both sidewalls of the gate electrode, and a source and drain region(40a,40b) are formed in the substrate. An HLD oxide layer(50) and an organic oxide layer(100) are sequentially stacked to planarize. The organic oxide layer is removed by etch-back, and the HLD oxide layer is etched to expose the hard mask. The complete salicide region is opened. The hard mask and the HLD oxide layer on the complete salicide region are entirely removed. The hard mask on the selective salicide region is removed by wet etching.