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发明名称
磁通道接合记忆胞元架构
摘要
一种记忆体装置包括具磁通道接合结构及读取开关的磁通道接合记忆体胞元,在一个实例中,该读取开关系连接至被用来写至该磁通道接合结构的导体。在进一步实例中,该读取开关为一藉由深孔接触点电耦合至该磁通道接合结构的电晶体。在进一步实例中,该记忆体装置包括复数个磁通道接合记忆体胞元及个别伴随该胞元的复数个导体以写入信息至该相关磁通道接合结构。每一个读取开关系连接至伴随磁通道接合胞元而非该读取开关所在的胞元之导体。
申请公布号
TW200418021
申请公布日期
2004.09.16
申请号
TW092129830
申请日期
2003.10.27
申请人
亿恒科技股份公司;国际商务机器公司 INTERNATIONAL BUSINESS MACHINES CORPORATION 美国
发明人
约翰 戴伯罗斯;迪特马尔 戈格;海因茨 赫尼希施密德
分类号
G11C11/16
主分类号
G11C11/16
代理机构
代理人
蔡清福
主权项
地址
德国
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