| 摘要 |
PROBLEM TO BE SOLVED: To provide a laser annealing method and device, capable of irradiating after forming the profile of a laser beam to be irradiated to the optimum profile for making a thin-film microcrystalline and enlarging the crystal grain size of a microcrystal film, rather than merely making uniform the profile of the laser beam to be irradiated, and controlling the temperature distribution on the thin film. SOLUTION: After a laser beam 2 is emitted from a laser light source 1, the profile of the laser beam 2 in one direction, in the cross section perpendicular to the optical axis of this laser beam 2, is made uniform. After that, the beam profile in the cross section in a direction perpendicular to one direction of the laser beam 2 is formed asymmetric, in such a manner that it is divided into a portion of the profile having a gently-sloped intensity distribution and a portion of the profile, having a steep intensity distribution with the top of the intensity of the laser beam sandwiched in between. An amorphous film 5 and the laser beam 2 are relatively moved, in such a manner that the amorphous film 5 is irradiated with the portion of the profile, having the gently-sloped intensity distribution, prior to the portion of the profile having the steep intensity distribution. COPYRIGHT: (C)2004,JPO&NCIPI
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