| 摘要 |
Methods and computer program for determining a model pattern of a diffracting structure for use in semiconductor metrology, in which methods a series of process steps to be employed in fabrication of a diffracting structure, such as a diffracting structure fabricated on a semiconductor substrate employing a lithographic process, are specified, and each such specified process step is successively simulated to produce a model pattern of the diffracting structure. The methods further provides for generation of libraries of model patterns and simulated diffraction signatures based thereon, and optionally further provides for comparing diffraction signatures of measured diffracting structures to simulated diffraction signatures of members of the set of model patterns of the diffracting structure, selection of one or more close match simulated diffraction signatures, and deriving one or more parameters associated with the measured diffracting structures.
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