METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL, SILICON SINGLE CRYSTAL, AND APPARATUS FOR PULLING SILICON SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To industrially easily and stably manufacture a defect-free silicon single crystal by improving the yield of the defect-free crystal and reducing the manufacturing cost of the crystal by expanding the permissible zone of the growth condition V/G (wherein, V is growth speed; and G is temperature gradient in the crystal axis direction) under which the defect-free crystal is obtained so that the growth condition V/G can be easily controlled even when the V/G is varied dynamically in the crystal growth; and to reduce the cost for manufacturing a pulling apparatus. SOLUTION: The zone of the growth condition V/G under which the defect-free crystal is obtained is rapidly expanded when the carbon concentration in the silicon single crystal becomes≤3×1015atom/cm3. An existing heat-shielding body 8 is positioned at a position A in the CZ furnace 2 where the body 8 contacts with the inner wall of a CZ furnace 2 and the carbon concentration in the silicon single crystal pulled is reduced so as to be≤1015atom/cm3. In the pulling process, the silicon single crystal is pulled while controlling the growth condition V/G so that void defects, OSF (oxygen-induced stacking faults), and dislocation clusters (interstitial silicon-type dislocation defects) are eliminated from the pulled silicon single crystal. COPYRIGHT: (C)2004,JPO&NCIPI