MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device using an ion implanter capable of performing a quantitative and efficient maintenance and with resolution of ion beams well administered. SOLUTION: An ammeter 17 is electrically connected to a mass spectroscopy slit 4 into which ion beams emitted from a source part are irradiated. Then, a degree of abrasion of the mass spectroscopy slit 4 as a result of irradiation of the ion beams is measured by measuring a current value flowing in the ammeter 17 electrically connected to the mass spectroscopy slit 4. COPYRIGHT: (C)2004,JPO&NCIPI